Browsing Scholarly Works, Materials Science and Engineering (MSE) by Subject "257/E21.664"

Now showing items 1-1 of 1

Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction

Electrical and Computer Engineering; Materials Science and Engineering (MSE); Cedraeus Incorporated; Virginia Polytechnic Institute and State University; Sharp Kabushiki Kaisha; Desu, Seshu B.; Yoo, In Kyung; Kwok, Chi Kong; Vijay, Dilip P. (United States Patent and Trademark Office, 1996-02-13)

A ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate ...