Temperature-dependent internal friction in silicon nanoelectromechanical systems

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TR Number
Date
2000-10-01
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract

We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the T=160-180 K range. (C) 2000 American Institute of Physics. [S0003-6951(00)01541-2].

Description
Keywords
Single-crystal silicon, Films
Citation
Evoy, S; Olkhovets, A; Sekaric, L; et al., "Temperature-dependent internal friction in silicon nanoelectromechanical systems," Appl. Phys. Lett. 77, 2397 (2000); http://dx.doi.org/10.1063/1.1316071