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dc.contributor.authorYang, Dongen
dc.contributor.authorYang, Ruixiaen
dc.contributor.authorWang, Kaien
dc.contributor.authorWu, Congcongen
dc.contributor.authorZhu, Xuejieen
dc.contributor.authorFeng, Jiangshanen
dc.contributor.authorRen, Xiaodongen
dc.contributor.authorFang, Guojiaen
dc.contributor.authorPriya, Shashanken
dc.contributor.authorLiu, Shengzhong (Frank)en
dc.date.accessioned2018-09-19T14:49:08Zen
dc.date.available2018-09-19T14:49:08Zen
dc.date.issued2018-08-13en
dc.identifier.urihttp://hdl.handle.net/10919/85048en
dc.description.abstractEven though the mesoporous-type perovskite solar cell (PSC) is known for high efficiency, its planar-type counterpart exhibits lower efficiency and hysteretic response. Herein, we report success in suppressing hysteresis and record efficiency for planar-type devices using EDTA-complexed tin oxide (SnO2) electron-transport layer. The Fermi level of EDTA-complexed SnO2 is better matched with the conduction band of perovskite, leading to high open-circuit voltage. Its electron mobility is about three times larger than that of the SnO2. The record power conversion efficiency of planar-type PSCs with EDTA-complexed SnO2 increases to 21.60% (certified at 21.52% by Newport) with negligible hysteresis. Meanwhile, the low-temperature processed EDTA-complexed SnO2 enables 18.28% efficiency for a flexible device. Moreover, the unsealed PSCs with EDTA-complexed SnO2 degrade only by 8% exposed in an ambient atmosphere after 2880 h, and only by 14% after 120 h under irradiation at 100 mW cm−2.en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherSpringer Natureen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleHigh efficiency planar-type perovskite solar cells with negligible hysteresis using EDTA-complexed SnO2en
dc.typeArticle - Refereeden
dc.title.serialNature Communicationsen
dc.identifier.doihttps://doi.org/10.1038/s41467-018-05760-xen
dc.identifier.volume9en
dc.type.dcmitypeTexten


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Creative Commons Attribution 4.0 International
License: Creative Commons Attribution 4.0 International