Low-temperature metalorganic chemical vapor-deposition of perovskite PB(ZRXTI1-X)O3 thin-films

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dc.contributorVirginia Techen
dc.contributor.authorPeng, C. H.en
dc.contributor.authorDesu, Seshu B.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:44Zen
dc.date.available2014-04-16T14:16:44Zen
dc.date.issued1992-07-01en
dc.description.abstractPb (ZrxTi1-x)O3 thin films with perovskite structure were successfully prepared on sapphire disks, Pt/Ti/SiO2/Si, and RuOx/SiO2/Si substrates at temperatures as low as 550-degrees-C by hot-wall metalorganic chemical vapor deposition. Safe and stable precursors were used, namely: lead tetramethylheptadione [Pb(thd)2], zirconium tetramethylheptadione [Zr(thd)4], and titanium ethoxide. The deposition rates were in the range of 10.0 to 20.0 nm/min. The Auger electron spectroscopy (AES) depth profile showed good uniformity across the bulk of the films. The AES spectra also showed no carbon contamination in the bulk of the films. Zr/Ti ratio were easily controlled by the precursor temperatures and the flow rate of diluent gas. Optical constants were measured by a UV-VIS-NIR spectrophotometer. As-deposited films were dense and showed uniform and fine grain size. The 600-degrees-C annealed film (Pb/Zr/Ti=50/41/9) showed a spontaneous polarization of 23.3-mu-C/cm3 and a coercive field of 64.5 kV/cm.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPeng, CH; Desu, SB, "Low-temperature metalorganic chemical vapor-deposition of perovskite PB(ZRXTI1-X)O3 thin-films," Appl. Phys. Lett. 61, 16 (1992); http://dx.doi.org/10.1063/1.107646en
dc.identifier.doihttps://doi.org/10.1063/1.107646en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47391en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/61/1/10.1063/1.107646en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectAuger electron spectroscopyen
dc.subjectMetallic thin filmsen
dc.subjectThin film structureen
dc.subjectDielectric oxidesen
dc.subjectLeaden
dc.titleLow-temperature metalorganic chemical vapor-deposition of perovskite PB(ZRXTI1-X)O3 thin-filmsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
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