Lasers with asymmetric barrier layers: A promising type of injection lasers

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dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorZubov, Fedor I.en
dc.contributor.authorKryzhanovskaya, Natalia V.en
dc.contributor.authorMaximov, Mikhail V.en
dc.contributor.authorZhukov, Alexey E.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2017-03-08T07:28:14Zen
dc.date.available2017-03-08T07:28:14Zen
dc.date.issued2016-08en
dc.description.abstractWe present an overview of our theoretical and experimental work on a novel type of semiconductor lasers – quantum well (QW) lasers with asymmetric barrier layers (ABLs). Our experimental work supports our theoretical derivations — ABL QW lasers demonstrate superior operating characteristics as compared to conventional QW lasers. In particular, the threshold current is lower and more temperature-stable, the light-current characteristic is more linear, and the wall-plug efficiency is higher in ABL lasers.en
dc.description.versionPublished versionen
dc.format.extent012111 - 012111 page(s)en
dc.identifier.doihttps://doi.org/10.1088/1742-6596/741/1/012111en
dc.identifier.eissn1742-6596en
dc.identifier.issn1742-6588en
dc.identifier.urihttp://hdl.handle.net/10919/75310en
dc.identifier.volume741en
dc.rightsCreative Commons Attribution 3.0 Unporteden
dc.rights.holderThe Author(s)en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleLasers with asymmetric barrier layers: A promising type of injection lasersen
dc.title.serialJournal of Physics: Conference Seriesen
dc.typeArticle - Refereeden
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen

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