Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device

dc.contributor.authorLau, Mark C.en
dc.contributor.committeechairElshabini-Riad, Aicha A.en
dc.contributor.committeememberBahl, I. J.en
dc.contributor.committeememberBesieris, Ioannis M.en
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2014-03-14T20:52:17Zen
dc.date.adate1997-08-05en
dc.date.available2014-03-14T20:52:17Zen
dc.date.issued1997-07-23en
dc.date.rdate1997-08-05en
dc.date.sdate1997-07-23en
dc.description.abstractThe development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the small signal equivalent circuit model. A thorough analysis of the strengths and weaknesses of the Simplex method is performed.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-7497-162858en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-7497-162858/en
dc.identifier.urihttp://hdl.handle.net/10919/36952en
dc.publisherVirginia Techen
dc.relation.haspartnewt.pdfen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectMESFETen
dc.subjectGallium Arsenideen
dc.subjectSmall Signalen
dc.subjectModelingen
dc.subjectSimplex Methoden
dc.titleSmall Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Deviceen
dc.typeThesisen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen
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