Plastic Relaxation of Highly Tensile Strained (100) Ge/InGaAs Heterostructures

Simple item page
dc.contributor.authorGoley, Patrick Stephenen
dc.contributor.committeechairHudait, Mantu K.en
dc.contributor.committeememberLester, Luke F.en
dc.contributor.committeememberHeremans, Jean J.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2015-07-30T08:00:30Zen
dc.date.available2015-07-30T08:00:30Zen
dc.date.issued2015-07-29en
dc.description.abstractBiaxial tensile strain has been shown to greatly enhance the optoelectronic properties of epitaxial germanium (Ge) layers. As a result, tensile-Ge (and#949t-Ge) layers grown on larger lattice constant InGaAs or GeSn have attracted great research interest. However, no previous studies have investigated the plastic relaxation occurring in these and#949t-Ge layers. Here, we experimentally demonstrate that plastic relaxation occurs in nearly all and#949t-Ge epitaxial layers that are of practical interest for optoelectronic applications, even when layers may still exhibit strain-enhanced characteristics. We show arrays of misfit dislocations (MDs), which are mostly disassociated, form at the and#949t-Ge/InGaAs interface for and#949t-Ge layers as thin as 15 nm with less than 1% total mismatch. Wedge geometry of plain view transmission electron microscopy (PV-TEM) foils is utilized to carry out a depth dependent investigation MD spacing for a range of and#949t-Ge/InGaAs heterostructures. MD spacing measured by PV-TEM is correlated to and#949t-Ge layer relaxation measured by high-resolution x-ray diffraction. We confirm very low relaxation (< 10% relaxed) in and#949t-Ge layers does not imply they have been coherently grown. We demonstrate plastic relaxation in the and#949t-Ge layer is acutely sensitive to grown-in threading dislocations (TDs) in the template material, and that reducing TD density is critical for maximizing strain retention. Given that and#949t-Ge layer thicknesses of 150+ nm with greater than 1% tensile strain are desired for optoelectronic devices, this work suggests that MDs may inevitably be present at and#949t-Ge/InGaAs heterointerfaces in practical devices, and that the effect of MDs on optoelectronic performance must be better understood.en
dc.description.degreeMaster of Scienceen
dc.format.mediumETDen
dc.identifier.othervt_gsexam:6044en
dc.identifier.urihttp://hdl.handle.net/10919/54944en
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecttensileen
dc.subjectstrainen
dc.subjectgermaniumen
dc.subjectmisfit dislocationsen
dc.subjectstacking faultsen
dc.subjectplastic relaxationen
dc.subjectelastic relaxationen
dc.subjectShockley partial dislocationsen
dc.titlePlastic Relaxation of Highly Tensile Strained (100) Ge/InGaAs Heterostructuresen
dc.typeThesisen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Goley_PS_T_2015.pdf
Size:
1.3 MB
Format:
Adobe Portable Document Format
Download

Collections

Masters Theses