Non-destructive tester for transistors

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorLee, Fred C.en
dc.contributor.inventorChen, Dan Y.en
dc.contributor.inventorCarpenter, Granten
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:42Zen
dc.date.available2016-08-24T17:53:42Zen
dc.date.filed1988-04-11en
dc.date.issued1989-07-25en
dc.description.abstractA non-destructive reverse-bias second breakdown tester for testing semiconductor devices such as transistors and thyristors that have a base-collector-emitter configuration. The tester basically comprises a socket for holding the device under test. A base drive provides a drive current to the base of the device under test. A collector supply provides a collector current to the device under test. A current diverter diverts current away from the device under test when the device under test experiences reverse-bias second breakdown. The diverter includes first, second and third switches arranged in series. A diode diverter is connected to the current supply and the third switch. A detector produces a first signal at the onset of reverse-bias second breakdown in the device under test. In response to the first signal, the first, second and third switches are activated in seriatim. The activation of all of the first, second and third switches causes the current applied to said device under test to be diverted through said diode diverter and the first, second and third switches.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber7179812en
dc.identifier.patentnumber4851769en
dc.identifier.urihttp://hdl.handle.net/10919/72297en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/69/517/048/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcG01R31/261en
dc.subject.uspc324/762.8en
dc.subject.uspcother324/110en
dc.titleNon-destructive tester for transistorsen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen
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