Scholarly Works, Center for Power Electronics Systems

Permanent URI for this collection

https://hdl.handle.net/10919/111744

Browse

Browsing Scholarly Works, Center for Power Electronics Systems by Author "DiMarino, Christina"

Now showing 1 - 3 of 3
  • Thumbnail Image
    Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
    Mocevic, Slavko; Yu, Jianghui; Fan, Boran; Sun, Keyao; Xu, Yue; Stewart, Joshua; Rong, Yu; Song, He; Mitrovic, Vladimir; Yan, Ning; Wang, Jun; Cvetkovic, Igor; Burgos, Rolando; Boroyevich, Dushan; DiMarino, Christina; Dong, Dong; Motwani, Jayesh Kumar; Zhang, Richard (IEEE, 2022-03)
    Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.
  • Thumbnail Image
    Semiconductor module arrangement
    (United States Patent and Trademark Office, 2018-07-24)
    In a switching module structure that includes a low-impedance path to ground, such as a parasitic capacitance of an insulating substrate, a further insulating substrate presenting a parasitic capacitance placed in series with the low impedance current path and a connection of a conductive layer to input voltage rails using a single decoupling capacitor or, preferably, a midpoint of the voltage rails formed by a series connection of decoupling capacitors maintains a large portion of common mode (CM) currents which are due to high dV/dt slew rates of SiC and GaN transistors within the switching module.
  • Thumbnail Image
    Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
    Qin, Yuan; Albano, Benjamin; Spencer, Joseph; Lundh, James Spencer; Wang, Boyan; Buttay, Cyril; Tadjer, Marko; DiMarino, Christina; Zhang, Yuhao (IOP Publishing, 2023-03)
    Power semiconductor devices are fundamental drivers for advances in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for a smaller chip size, lower loss and higher frequency compared with their silicon (Si) counterparts, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Packaging in particular is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to their low intrinsic carrier density and increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, requires new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for device-package electrothermal co-design and high-temperature packages that can withstand the high electric fields expected in UWBG devices.