Browsing by Author "Al-Mamun, Mohammad Shah"

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    Development of a Miniature, Fiber-optic Temperature Compensated Pressure Sensor
    Al-Mamun, Mohammad Shah (Virginia Tech, 2014-12-11)
    Since the invention of Laser (in 1960) and low loss optical fiber (in 1966) [1], extensive research in fiber-optic sensing technology has made it a well-defined and matured field [1]. The measurement of physical parameters (such as temperature and pressure) in extremely harsh environment is one of the most intriguing challenges of this field, and is highly valued in the automobile industry, aerospace research, industrial process monitoring, etc. [2]. Although the semiconductor based sensors can operate at around 500oC, sapphire fiber sensors were demonstrated at even higher temperatures [3]. In this research, a novel sensor structure is proposed that can measure both pressure and temperature simultaneously. This work effort consists of design, fabrication, calibration, and laboratory testing of a novel structured temperature compensated pressure sensor. The aim of this research is to demonstrate an accurate temperature measurement, and pressure measurement using a composite Fabry-Perot interferometer. One interferometer measures the temperature and the other accurately measures pressure after temperature compensation using the temperature data from the first sensor.
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    Electron tunneling between vibrating atoms in a copper nano-filament
    Al-Mamun, Mohammad Shah; Orlowski, Marius K. (Springer, 2021-04)
    Nanowires, atomic point contacts, and chains of atoms are one-dimensional nanostructures, which display size-dependent quantum effects in electrical and thermal conductivity. In this work a Cu nanofilament of a defined resistance and formed between a Cu and Pt electrode is heated remotely in a controlled way. Depending on the robustness of the conductive filament and the amount of heat transferred several resistance-changing effects are observed. In case of sufficiently fragile nanofilament exhibiting electrical quantum conductance effects and moderate heating applied to it, a dramatic increase of resistance is observed just after the completion of the heating cycle. However, when the filament is allowed to cool off, a spontaneous restoration of the originally set resistance of the filament is observed within less than couple tens of seconds. When the filament is sufficiently fragile or the heating too excessive, the filament is permanently ruptured, resulting in a high resistance of the cell. In contrast, for robust, low resistance filaments, the remote heating does not affect the resistance. The spontaneous restoration of the initial resistance value is explained by electron tunneling between neighboring vibrating Cu atoms. As the vibrations of the Cu atoms subside during the cooling off period, the electron tunneling between the Cu atoms becomes more likely. At elevated temperatures, the average tunneling distance increases, leading to a sharp decrease of the tunneling probability and, consequently, to a sharp increase in transient resistance.
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    Electron Tunneling between Vibrating Cu Atoms in a Cu Filament in a Memristive ReRAM Memory Cell
    Orlowski, Marius K.; Al-Mamun, Mohammad Shah (Springer, 2021-12-01)
    Depending on the amount of heat transport, thermal cross-talk between ReRAM cells of a crossbar array (Fig. 1) may cause permanent or transient erasure of programmed cells by a neighboring cell subject to frequent write/erase cycles. The transient erasure is explained by local temperature dependence of a 3D resistor network built of unit quantum conductance. The process of the spontaneous recovery of the electric conductivity of the conductive filament (CF) is explained as an attenuation of Cu atom vibrations in the CF with the attendant increase of electron tunneling effects for which the variation of the average tunneling distance between the vibrating Cu atoms is proportional to the square root of the absolute temperature. At high temperatures, the average tunneling distance increases, leading to a sharp decrease of the tunneling probability and, consequently, to a sharp increase in transient resistance. The thermal cross-talk allows heat to pass controllably from a neighboring cell to the target cell. The heating of the neighboring cell can be accomplished by application of frequent heating cycles, by selecting the level of compliance current level during the set process, and or by applying a low voltage ramp rate to both the set and reset operation. Here, we focus probed cells as indicated in Fig. 2 that have been set, prior to the heating of a neighboring cell and we monitor the resistance of the probed cell before and after the thermal-cross-talk with the heated cell. We observe several phenomena including a temporary erasure of the target cell and its spontaneous recovery to a preset value. Such spontaneous recovery as a function of time is shown in Fig. 3 90-110 s after the heating of the cell has ceased. The spontaneous recover is explained by 3D resistor model of the CF (see Fig. 5), consisting of identical resistors of Ro=1/Go, where Go is given by the Landauer Go=(2e2/h)×t where t is the tunneling transmission probability between two neighboring Cu atoms. The observation of quantum conductance of our memristive cell is shown in Fig. 4. The tunneling probability t depends exponentially on the local temperature T of the CF and explains the restoration of the initial resistance of the CF after the filament has cooled off. The transient and permanent erasure effects may be mitigated by the use of composite electrodes with high a thermal conductivity.
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    Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array
    Al-Mamun, Mohammad Shah (Virginia Tech, 2019-11-11)
    While the scaling of conventional memories based on floating gate MOSFETs is getting increasingly difficult, novel type of non-volatile memories, such as resistive switching memories, have lately found increased attention by both industry and academia. Resistive switching memory (ReRAM) is being considered one of the prime candidates for next-generation non-volatile memory due to relatively high switching speed, superior scalability, low power consumption, good retention and simplicity of its structure which does not require the expensive real estate structure of the silicon substrate. Furthermore, integration of ReRAM directly into a CMOS low-k/Cu interconnect module would not only reduce latency in connectivity constrained devices, but also would reduce chip's footprint by stacking memory layers on top of the logic circuits. One good candidate is the well-behaved Cu/TaOx/Pt resistive switching device. However, since platinum (Pt) acting as the inert electrode is not an economic choice for industrial production, a Back End of Line (BEOL)-compatible replacement of Pt is highly desirable. A systematic investigation has been conducted and metals such as Ru, Rh and Ir are found to be the best potential candidates to supplant Pt. The device properties of Ru, Rh and Ir based resistive switching devices have been explored in this work. However, the challenges of implementing ReRAM cell into BEOL of CMOS encompass not only the choice of materials of a CBRAM cell proper, but also the way the cell is embedded within BEOL. In case of the inert electrode, the metal interfacing the solid electrolyte (e.g. TaOx) has to be supplanted by a glue layer, and heat transport layer, leading to an engineering task of a composite electrode beyond the requirements of low miscibility with, and low surface diffusivity of the inert electrode with respect of the active metal atoms released by the active electrode (here Cu). The metal of the active electrode (Cu, Ag, Ni) is required to allow for a copious redox reaction but simultaneously preventing reactions with the dielectric. Finally, for the solid electrolyte, a dielectric with a moderate level of defects is preferred which may be controlled, for example by the deposition processes modulating the stoichiometry of the material. This research study begins with exploration of several devices derived from the benchmark device Cu/TaOx/Pt and manufacturing those in Micron nanofabrication and characterization laboratory at Virginia Tech with the latter device used as a benchmark for performance assessment. Electric characterization of the manufactured Cu/TaOx/Ru devices has shown some notable differences between them due to the different formation, shape and rupture of the conductive filament. The inferior switching properties of the Ru device have been attributed to the substantially degraded inertness properties of the Ru electrode as a stopping barrier for Cu as compared to the Pt electrode. To study this degradation effect further, two nominally identical devices however differently embedded on the Si wafer have been fabricated. The electric behavior of the two devices are found to be markedly different and is attributed to the difference in high local temperatures in the device during the switching that cause species interlayer diffusion and trigger undesired chemical reactions. Thus, the embedment of the device has a foremost impact on the intrinsic device performance. To investigate the impact of inert electrode on the endurance of ReRAM memory cells, baseline device Cu/TaOx/Pt/Ti is compared with six devices manufactured with different inert electrode constructions: Pt/Cr, Rh/Cr, Rh/Ti, Rh/Al2O3, Ir/Ti, and Ir/Cr, while the Cu electrode and the TaOx dielectric are identical. Although the glue layers Ti, Cr or Al2O3 are not an inherent part of the device proper, they have a tangible impact on the device endurance as well. It is experimentally demonstrated that inert electrodes with high thermal conductivities have superior endurance properties over an electrode with low thermal conductivity and the heat conductivity of inert electrode has a substantial impact on ReRAM cell performance. Since reset operation is a thermally driven process, frequent switching of resistive memory cell leads to a local accumulation of Joules heat, especially when the switching rate is faster than the heat removal rate. This investigation of local heating effects led to the exploration of non-local heat transfer within a memory array. In a crossbar arranged ReRAM cell array, heat generated in one device spreads via common electrode metal lines to the neighboring cells causing their performance degradation constituting non-local heat transfer mechanism leading to performance deterioration of neighboring cells. In addition to the electrical characterization of devices affected by the remote heat transfer, novel cell array architectures have been proposed and investigated with the goal to significantly mitigate the cell-to-cell thermal crosstalk. One of the possible mitigation measures would be modified cell erasure algorithm.
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    Performance Degradation of Nanofilament Switching Due to Joule Heat Dissipation
    Al-Mamun, Mohammad Shah; Orlowski, Marius K. (MDPI, 2020-01-09)
    When a memory cell of a Resistive Random Access Memory (ReRAM) crossbar array is switched repeatedly, a considerable amount of Joule heat is dissipated in the cell, and the heat may spread to neighboring cells that share one of the electrode lines with the heat source device. The remote heating of a probed memory cell by another cell allows separating the influence of temperature effects from the impact of the electric field on the resistive switching kinetics. We find that the cell-to-cell heat transfer causes severe degradation of electrical performance of the unheated neighboring cells. A metric for the thermal degradation of the I–V characteristics is established by a specific conditioning of a so-called “marginal” device used as a temperature-sensitive probe of electrical performance degradation. We find that even neighboring cells with no common metal electrode lines with the heated cell suffer substantial electrical performance degradation provided that intermediate cells of the array are set into a conductive state establishing a continuous thermal path via nanofilaments between the heated and probed cells. The cell-to-cell thermal cross-talk poses a serious electro-thermal reliability problem for the operation of a memory crossbar array requiring modified write/erase algorithms to program the cells (a thermal sneak path effect). The thermal cross-talk appears to be more severe in nanometer-sized memory arrays even if operated with ultra-fast, nanosecond-wide voltage/current pulses.
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