Browsing by Author "Chung, Ilsub"
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- Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O-3/Pt ferroelectric capacitorLee, J. K.; Kim, T. Y.; Chung, Ilsub; Desu, Seshu B. (AIP Publishing, 1999-07-01)The damage of Pb(Zr0.53Ti0.47)O-3 thin film due to dry etching process was characterized in terms of the microstructure and electrical properties. The damaged layer seems to be amorphous and the thickness of the damaged layer is about 10 nm. The existence of such a layer in Pt/Pb(Zr0.53Ti0.47)O-3/Pt ferroelectric capacitor tends to increase the coercive voltage and the leakage current. The damaged layer was not fully reverted to perovskite phase by the thermal annealing. With the wet cleaning treatment, however, the damaged layer was successfully removed thereby revealing significantly improved electrical properties. (C) 1999 American Institute of Physics. [S0003-6951(99)00529-X].
- Improvement in the electrical properties in Pt/Pb(Zr0.52Ti0.48)O-3/Pt ferroelectric capacitors using a wet cleaning methodLee, June K.; Park, Youngsoo; Chung, Ilsub; Oh, Sang Jeong; Jung, Dong J.; Song, Yoon J.; Koo, Bon J.; Lee, Sung Y.; Kim, Kinam; Desu, Seshu B. (American Institute of Physics, 1999-12-01)A wet cleaning solution was designed to specifically eliminate nonferroelectric phases, such as pyrochlore, PbO, and the etching damaged layer. Scanning electron microscopy pictures clearly showed that treatment with the cleaning solution completely removed these nonferroelectric phases. After removing the nonferroelectric phases, ferroelectric properties such as remnant polarization, coercive voltage, and leakage current, were remarkably improved. In addition, the wet cleaned ferroelectric capacitors yielded superior endurance against hydrogen-induced damage compared to those of the noncleaned capacitors. (C) 1999 American Institute of Physics. [S0021-8979(99)02622-5].