Browsing by Author "Purdue University. Department of Electrical and Computer Engineering"

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    Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
    Rajamohanan, Bijesh; Mohata, Dheeraj K.; Zhu, Yan; Hudait, Mantu K.; Jiang, Zhengping; Hollander, Matthew; Klimeck, Gerhard; Datta, Suman (American Institute of Physics, 2014-01-23)
    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.