Now showing items 1-6 of 6
Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down- and up-conversions
This paper introduces a new synthesis procedure to form erbium-doped ceria nanoparticles (EDC NPs) that can act as an optical medium for both up-conversion and down-conversion in the same time. This synthesis process results ...
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
(American Institute of Physics, 2012-07-15)
The structural, morphological, defect properties, and OFF state leakage current mechanism of mixed As-Sb type-II staggered gap GaAs-like and InAs-like interface heterostructure tunnel field effect transistors (TFETs) grown ...
Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium
(American Institute of Physics, 2014-01-14)
We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111) A GaAs substrates ...
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
(American Institute of Physics, 2012-11-01)
The compositional dependence of effective tunneling barrier height (E-beff) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) ...
Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
(American Institute of Physics, 2013-01-14)
The experimental study of the valence band offset (Delta E-v) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor ...
Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge
(American Institute of Physics, 2013-07-14)
Growth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their utilization in low power transistor are reported. ...