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dc.contributor.authorLi, Mi-Fengen_US
dc.contributor.authorYu, Yingen_US
dc.contributor.authorHe, Ji-Fangen_US
dc.contributor.authorWang, Li-Juanen_US
dc.contributor.authorZhu, Yanen_US
dc.contributor.authorShang, Xiang-junen_US
dc.contributor.authorNi, Hai-Qiaoen_US
dc.contributor.authorNiu, Zhi-Chuanen_US
dc.date.accessioned2013-03-13T00:09:34Z
dc.date.available2013-03-13T00:09:34Z
dc.date.issued2013-02-18
dc.identifier.citationNanoscale Research Letters. 2013 Feb 18;8(1):86en_US
dc.identifier.urihttp://hdl.handle.net/10919/19283
dc.description.abstractA method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.en_US
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.rightsCreative Commons Attribution 4.0 International*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.titleIn situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dotsen_US
dc.typeArticle - Refereed
dc.date.updated2013-03-13T00:09:35Z
dc.description.versionPeer Reviewed
dc.rights.holderMi-Feng Li et al.; licensee BioMed Central Ltd.en_US
dc.title.serialNanoscale Research Letters
dc.identifier.doihttps://doi.org/10.1186/1556-276X-8-86
dc.type.dcmitypeText


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Creative Commons Attribution 4.0 International
License: Creative Commons Attribution 4.0 International