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    • Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 

      Ali, A.; Madan, H. S.; Kirk, A. P.; Zhao, D. A.; Mourey, D. A.; Hudait, Mantu K.; Wallace, R. M.; Jackson, T. N.; Bennett, B. R.; Boos, J. B.; Datta, S. (AIP Publishing, 2010-10-01)
      N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide ...