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    • Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors 

      Rajamohanan, Bijesh; Mohata, Dheeraj K.; Zhu, Yan; Hudait, Mantu K.; Jiang, Zhengping; Hollander, Matthew; Klimeck, Gerhard; Datta, Suman (American Institute of Physics, 2014-01-23)
      In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. ...