Browsing Scholarly Works, Materials Science and Engineering (MSE) by Author "Asryan, Levon V."
Now showing items 116 of 16

Carrier capture delay and modulation bandwidth in an edgeemitting quantum dot laser
Asryan, Levon V.; Wu, Y. C.; Suris, R. A. (AIP Publishing, 20110301)We show that the carrier capture from the optical confinement layer into quantum dots (QDs) can strongly limit the modulation bandwidth omega(3) dB of a QD laser. As a function of the crosssection sigma(n) of carrier ... 
Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics
Zubov, F. I.; Zhukov, A. E.; Shernyakov, Y. M.; Maximov, M. V.; Semenova, E. S.; Asryan, Levon V. (Iop Publishing Ltd, 20150101)It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress nonlinearity of lightcurrent characteristic and thus improve its power characteristics under high current injection. ... 
Direct and indirect capture of carriers into the lasing ground state and the lightcurrent characteristic of quantum dot lasers
Wu, Yuchang; Asryan, Levon V. (Amer Inst Physics, 20140314)We calculate the lightcurrent characteristic (LCC) of a quantum dot (QD) laser under the conditions of both direct and indirect capture of carriers from the optical confinement layer into the lasing ground state in QDs. ... 
Effect of excited states on the groundstate modulation bandwidth in quantum dot lasers
Wu, Y. C.; Suris, R. A.; Asryan, Levon V. (AIP Publishing, 20130501)We consider direct and indirect (excitedstatemediated) capture of carriers from the waveguide region into the lasing ground state in quantum dots (QDs) and calculate the modulation response of a QD laser. We show that, ... 
Effect of internal optical loss on the modulation bandwidth of a quantum dot laser
Wu, Y. C.; Suris, R. A.; Asryan, Levon V. (AIP Publishing, 20120301)We show that the internal optical loss, which increases with freecarrier density in the waveguide region, considerably reduces the modulation bandwidth omega(3 dB) of a quantum dot laser. At a certain optimum value ... 
Improvement of temperaturestability in a quantum well laser with asymmetric barrier layers
Zhukov, A. E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; Shernyakov, Y. M.; Maximov, Mikhail V.; Semenova, E. S.; Yvind, K.; Asryan, Levon V. (AIP Publishing, 20120101)We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperaturestability ... 
Lasers with asymmetric barrier layers: A promising type of injection lasers
Asryan, Levon V.; Zubov, Fedor I.; Kryzhanovskaya, Natalia V.; Maximov, Mikhail V.; Zhukov, Alexey E. (201608)We present an overview of our theoretical and experimental work on a novel type of semiconductor lasers – quantum well (QW) lasers with asymmetric barrier layers (ABLs). Our experimental work supports our theoretical ... 
Lightcurrent characteristic of a quantum well laser with asymmetric barrier layers
Asryan, Levon V.; Kryzhanovskaya, Natalia V.; Maximov, Mikhail V.; Zubov, Fedor I.; Zhukov, Alexey E. (American Institute of Physics, 20131014)Lightcurrent characteristic (LCC) of a novel type of quantum well (QW) lasersQW lasers with asymmetric barrier layers (ABLs)is studied. The ABLs (one on each side of the QW) prevent electrons from entering the holeinjecting ... 
Limitations on standard procedure of determining internal loss and efficiency in quantum dot lasers
Asryan, Levon V. (American Institute of Physics, 20060101)Limitations are discussed on the use in quantum dot (QD) lasers of the conventional method of determining internal loss coefficient alpha(int) and internal quantum efficiency eta(int) from a measured plot of the reciprocal ... 
Maximum power of quantum dot laser versus internal loss
Asryan, Levon V. (AIP Publishing, 20060201)Internal loss, which increases with the carrier density outside the active region, causes a rollover of the lightcurrent curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The ... 
Optical power of semiconductor lasers with a lowdimensional active region
Asryan, Levon V.; Sokolova, Zinaida N. (Amer Inst Physics, 20140114)A comprehensive analytical model for the operating characteristics of semiconductor lasers with a lowdimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons ... 
Output power of a quantum dot laser: Effects of excited states
Wu, Yuchang; Jiang, Li; Asryan, Levon V. (Amer Inst Physics, 20151114)A theory of operating characteristics of quantum dot (QD) lasers is discussed in the presence of excited states in QDs. We consider three possible situations for lasing: (i) groundstate lasing only; (ii) groundstate ... 
Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure
Asryan, Levon V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S. (Iop Publishing, 2016)A model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the ... 
Theory of photovoltaic characteristics of semiconductor quantum dot solar cells
Wu, Yuchang; Asryan, Levon V. (Amer Inst Physics, 20160828)We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression ... 
Tunnelinginjection of electrons and holes into quantum dots: A tool for highpower lasing
Han, D. S.; Asryan, Levon V. (AIP Publishing, 20080601)We study the optical output power of a semiconductor laser, which exploits tunnelinginjection of electrons and holes into quantum dots (QDs) from two separate quantum wells. Even if there is outtunneling leakage of ... 
Upper limit for the modulation bandwidth of a quantum dot laser
Asryan, Levon V.; Suris, R. A. (AIP Publishing, 20100501)We derive a closedform expression for the upper limit for the modulation bandwidth of a semiconductor quantum dot (QD) laser. The highest possible bandwidth increases directly with overlap integral of the electron and ...