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dc.contributorVirginia Techen
dc.contributor.authorLi, Menghuien
dc.contributor.authorWang, Yaojinen
dc.contributor.authorGao, Junqien
dc.contributor.authorLi, Jiefangen
dc.contributor.authorViehland, Dwight D.en
dc.date.accessioned2014-01-21T19:28:04Zen
dc.date.available2014-01-21T19:28:04Zen
dc.date.issued2012-07-01en
dc.identifier.citationLi, Menghui; Wang, Yaojin; Gao, Junqi; et al., "Enhanced magnetoelectric effect in self-stressed multi-push-pull mode Metglas/Pb(Zr,Ti)O-3/Metglas laminates," Appl. Phys. Lett. 101, 022908 (2012); http://dx.doi.org/10.1063/1.4737179en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24928en
dc.description.abstractTwo methods to effectively induce self-stress on Metglas/Pb(Zr,Ti)O-3/Metglas laminate are presented: (i) applying a dc magnetic field to the Metglas layers or (ii) applying a dc electric field to the core piezoelectric composites. An optimum self-stress enhances the magnetoelectric (ME) effect in the laminates. With a 20 Oe dc magnetic bias, the value of alpha(ME) for the self-stressed laminate was enhanced to 31.4 V/cm center dot Oe, which was by a factor of 1.24x compared to the laminate without self-stress. Furthermore, the equivalent magnetic noise floor was reduced by the self-stress at low frequencies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737179]en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectMultiferroicsen
dc.subjectPhysicsen
dc.titleEnhanced magnetoelectric effect in self-stressed multi-push-pull mode Metglas/Pb(Zr,Ti)O-3/Metglas laminatesen
dc.typeArticle - Refereeden
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/101/2/10.1063/1.4737179en
dc.date.accessed2014-01-10en
dc.title.serialApplied Physics Lettersen
dc.identifier.doihttps://doi.org/10.1063/1.4737179en
dc.type.dcmitypeTexten


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