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    Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates

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    Date
    2012-09-01
    Author
    Wang, Zhiguang
    Li, Yanxi
    Chen, Bo
    Viswan, Ravindranath
    Li, Jiefang
    Viehland, Dwight D.
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    Abstract
    We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D-33 approximate to 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754713]
    URI
    http://hdl.handle.net/10919/24948
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    • Scholarly Works, Center for Energy Harvesting Materials and Systems (CEHMS) [61]
    • Scholarly Works, Materials Science and Engineering (MSE) [376]

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