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dc.contributorVirginia Techen
dc.contributor.authorTang, S. H.en
dc.contributor.authorChang, E. Y.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorMaa, J. S.en
dc.contributor.authorLiu, C. W.en
dc.contributor.authorLuo, G. L.en
dc.contributor.authorTrinh, H. D.en
dc.contributor.authorSu, Y. H.en
dc.date.accessioned2014-01-28T18:00:14Zen
dc.date.available2014-01-28T18:00:14Zen
dc.date.issued2011-04-01en
dc.identifier.citationTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; et al., "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate," Appl. Phys. Lett. 98, 161905 (2011); http://dx.doi.org/10.1063/1.3580605en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25180en
dc.description.abstractHigh-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]en
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectHeterostructuresen
dc.subjectGermaniumen
dc.subjectPhysicsen
dc.titleHigh quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateen
dc.typeArticle - Refereeden
dc.contributor.departmentElectrical and Computer Engineeringen
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/98/16/10.1063/1.3580605en
dc.date.accessed2014-01-17en
dc.title.serialApplied Physics Lettersen
dc.identifier.doihttps://doi.org/10.1063/1.3580605en
dc.type.dcmitypeTexten


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