Show simple item record

dc.contributorVirginia Techen_US
dc.contributor.authorTang, S. H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorHudait, Mantu K.en_US
dc.contributor.authorMaa, J. S.en_US
dc.contributor.authorLiu, C. W.en_US
dc.contributor.authorLuo, G. L.en_US
dc.contributor.authorTrinh, H. D.en_US
dc.contributor.authorSu, Y. H.en_US
dc.date.accessioned2014-01-28T18:00:14Z
dc.date.available2014-01-28T18:00:14Z
dc.date.issued2011-04-01
dc.identifier.citationTang, Shih-Hsuan; Chang, Edward Yi; Hudait, Mantu; et al., "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate," Appl. Phys. Lett. 98, 161905 (2011); http://dx.doi.org/10.1063/1.3580605
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25180
dc.description.abstractHigh-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580605]
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectHeterostructuresen_US
dc.subjectGermaniumen_US
dc.subjectPhysicsen_US
dc.titleHigh quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrateen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/98/16/10.1063/1.3580605
dc.date.accessed2014-01-17
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.3580605
dc.type.dcmitypeTexten_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record