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dc.contributorVirginia Techen_US
dc.contributor.authorDussan, S.en_US
dc.contributor.authorKumar, Amiten_US
dc.contributor.authorScott, J. F.en_US
dc.contributor.authorPriya, Shashanken_US
dc.contributor.authorKatiyar, R. S.en_US
dc.date.accessioned2014-01-28T18:00:17Z
dc.date.available2014-01-28T18:00:17Z
dc.date.issued2010-12-01
dc.identifier.citationDussan, S.; Kumar, A.; Scott, J. F.; et al., "Room temperature multiferroic effects in superlattice nanocapacitors," Appl. Phys. Lett. 97, 252902 (2010); http://dx.doi.org/10.1063/1.3528210
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25199
dc.description.abstractA composite nanocapacitor was fabricated based on ferroelectric PbZr(0.52)Ti(0.48)O(3)( PZT) and half-metallic oxide La(0.67)Sr(0.33)MnO(3)(LSMO) with 5 nm/l nm periodicity, respectively. X-ray theta-2 theta scan and Phi-scan revealed epitaxial growth of nanocapacitors. At room temperature, a microscopic polarization of 11 mu C/cm(2) and magnetization of 50 emu/cm(3) were measured for superlattice nanocapacitors. Local piezo force microscopy measurements revealed switching of polarization under external bias field confirming ferroelectric behavior. Zero field cooling measurements showed the existence of cusp in magnetization at low temperatures indicating spin-glass-like behavior contrary to Pb( Zr(x)Ti(1-x))O(3) /La(x)Sr(1-x)MnO(3) bilayer structure. Frequency dependent dielectric anomaly was observed near room temperature suggesting dynamic magneto (resistance)-dielectric coupling. (C) 2010 American Institute of Physics. [doi:10.1063/1.3528210]
dc.description.sponsorshipDOE FG 02-08ER46526, NSF-RII-0701-525
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectMagnetic ferroelectricsen_US
dc.subjectThin filmsen_US
dc.subjectMagnetoresistanceen_US
dc.subjectMemoriesen_US
dc.subjectPhysicsen_US
dc.titleRoom temperature multiferroic effects in superlattice nanocapacitorsen_US
dc.typeArticle - Refereeden_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/97/25/10.1063/1.3528210
dc.date.accessed2014-01-17
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.3528210
dc.type.dcmitypeTexten_US


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