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dc.contributorVirginia Techen_US
dc.contributor.authorTrinh, H. D.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorWu, P. W.en_US
dc.contributor.authorWong, Y. Y.en_US
dc.contributor.authorChang, C. T.en_US
dc.contributor.authorHsieh, Y. F.en_US
dc.contributor.authorYu, C. C.en_US
dc.contributor.authorNguyen, H. Q.en_US
dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorLin, K. L.en_US
dc.contributor.authorHudait, Mantu K.en_US
dc.date.accessioned2014-01-28T18:00:17Z
dc.date.available2014-01-28T18:00:17Z
dc.date.issued2010-07-01
dc.identifier.citationTrinh, H. D.; Chang, E. Y.; Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http://dx.doi.org/10.1063/1.3467813
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25200
dc.description.abstractThe inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]
dc.description.sponsorshipTaiwan National Science Council_NSC97-2221-E-009-156-MY2
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectAluminaen_US
dc.subjectAnnealingen_US
dc.subjectEnergy gapen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectInterface statesen_US
dc.subjectMOS capacitorsen_US
dc.subjectSurface treatmentsen_US
dc.subjectX-ray photoelectron spectraen_US
dc.subjectal2o3en_US
dc.subjectPhysicsen_US
dc.titleThe influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitoren_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/97/4/10.1063/1.3467813
dc.date.accessed2014-01-17
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.3467813
dc.type.dcmitypeTexten_US


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