Show simple item record

dc.contributorVirginia Tech
dc.contributor.authorList, E. J. W.
dc.contributor.authorKim, C. H.
dc.contributor.authorShinar, J.
dc.contributor.authorPogantsch, A.
dc.contributor.authorLeising, G.
dc.contributor.authorGraupner, W.
dc.date.accessioned2014-02-03T15:57:14Z
dc.date.available2014-02-03T15:57:14Z
dc.date.issued2000-04
dc.identifier.citationList, EJW; Kim, CH; Shinar, J; et al., "Charged defects in highly emissive organic wide-band-gap semiconductors," Appl. Phys. Lett. 76, 2083 (2000); http://dx.doi.org/10.1063/1.126262
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25244
dc.description.abstractA combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2 x 10(16) for the polymer and 1 x 10(14) cm(-3), for the oligomer, are the lowest reported for para-phenylene-type materials. (C) 2000 American Institute of Physics. [S0003-6951(00)03615-9].
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectlight-emitting-diodes
dc.subjectconjugated polymers
dc.subjectladder polymer
dc.subjectPhysics
dc.titleCharged defects in highly emissive organic wide-band-gap semiconductors
dc.typeArticle - Refereed
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/76/15/10.1063/1.126262
dc.date.accessed2014-01-24
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.126262


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record