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dc.contributorVirginia Techen_US
dc.contributor.authorSenkevich, J. J.en_US
dc.contributor.authorDesu, Seshu B.en_US
dc.date.accessioned2014-02-03T15:57:18Z
dc.date.available2014-02-03T15:57:18Z
dc.date.issued1998-01-01
dc.identifier.citationSenkevich, JJ; Desu, SB, "Poly(tetrafluoro-p-xylylene), a low dielectric constant chemical vapor polymerized polymer," Appl. Phys. Lett. 72, 258 (1998); http://dx.doi.org/10.1063/1.120703
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/25268
dc.description.abstractA low dielectric constant polymer, poly(tetrafluoro-p-xylylene) (VT-4) was synthesized by a chemical vapor polymerization process using 4,5,7,8,12,13,15,16-octafluoro-[2.2]-paracyclophane as a precursor. The VT-4 polymer has a dielectric constant of 2.42 and a dielectric loss of 0.008 at 1 MHz, perpendicular to the plane of the film. Thermal stability of VT-4 satisfied die SEMATECH criteria, exhibiting an onset of degradation at 460 degrees C, and 1% weight loss at 480 degrees C in an argon environment. The x-ray diffraction data suggest a disordered semicrystalline polymer as-deposited (at similar to 12 degrees C). The crystalline phase became mon ordered due to a decrease in the d spacing from 4.850 to 4.594 Angstrom and an increase in the percent crystallinity from 39% as-deposited to 66% after successive postdeposition anneals to 300 degrees C. Optical measurements showed a highly anisotropic thin film with n(e) @630 nm=1.601 and n(0) @630 nm=1.471, progressively becoming more negatively birefringent after postdeposition anneals, reaching a plateau at similar to 250 degrees C, due to the polymer chain becoming more conformationally ordered. (C) 1998 American Institute of Physics.
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectThin filmsen_US
dc.subjectDepositionen_US
dc.subjectPhysicsen_US
dc.titlePoly(tetrafluoro-p-xylylene), a low dielectric constant chemical vapor polymerized polymeren_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/72/2/10.1063/1.120703
dc.date.accessed2014-01-24
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.120703
dc.type.dcmitypeTexten_US


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