Show simple item record

dc.contributorVirginia Tech
dc.contributor.authorSongprakob, W.
dc.contributor.authorZallen, R.
dc.contributor.authorLiu, W. K.
dc.contributor.authorBacher, K. L.
dc.date.accessioned2014-02-11T13:45:57Z
dc.date.available2014-02-11T13:45:57Z
dc.date.issued2000-08-15
dc.identifier.citationSongprakob, W ; Zallen, R ; Liu, WK ; et al., Aug 15, 2000. "Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C," PHYSICAL REVIEW B 62(7): 4501-4510. DOI: 10.1103/PhysRevB.62.4501
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/10919/25382
dc.description.abstractInfrared reflectivity measurements (200-5000 cm(-1)) and transmittance measurements (500-5000 cm(-1)) have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm(-1) region and the one-phonon band near 270 cm(-1) rides on a progressively increasing high-reflectivity background, An effective; plasmon/one-phonon dielectric function with only two free parameters (plasma frequency omega(p) and damping constant gamma) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of omega(p)(2) on hole concentration p is linear; at p = 1.4 x 10(20) cm(-3), omega(p) is 2150 cm(-1). At each doping, the damping constant gamma is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is dose to unity, so that the Hall mobility provides a good estimate of actual de mobility. The observed dichotomy between the de and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k.p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the de and infrared mobilities do not differ.
dc.language.isoen_US
dc.publisherAmerican Physical Society
dc.subjectmolecular-beam epitaxy
dc.subjectheterojunction bipolar-transistors
dc.subjecteffective
dc.subjecthall factor
dc.subjectcarbon tetrabromide
dc.subjectoptical-absorption
dc.subjectraman-scattering
dc.subjectmodes
dc.subjectreflectance
dc.subjectspectra
dc.subjectreflectivity
dc.subjectPhysics
dc.titleInfrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C
dc.typeArticle
dc.identifier.urlhttp://link.aps.org/doi/10.1103/PhysRevB.62.4501
dc.date.accessed2013-12-18
dc.title.serialPhysical Review B
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.62.4501


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record