Now showing items 1-3 of 3
Stress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibers
(AIP Publishing, 1999-10-01)
The evolution of the index change of type-IIa gratings observed in 28 mol % Ge-SiO2 core fibers with 1.8 mu m core diameter under various strains was measured from the optical spectra, and the induced defects at high and ...
Uniform component of index structure induced in Ge-SiO2 fibers by spatially modulated ultraviolet light
(AIP Publishing, 1998-06-01)
Experimental data are presented to show that Ge(1) and Ge(2) centers are induced by trapping photoinduced electrons from the conduction band, in agreement with our previous proposal that both are trapped electron centers. ...
Structural origin of the 5.16-EV optical-absorption band in silica and GE-doped silica
(AIP Publishing, 1994-03-01)
The origin of the 5.16 eV absorption band observed in silica and Ge-doped silica was studied using optical and electron spin resonance (ESR) measurements. The band was observed only in samples containing Ge, suggesting ...