Power devices play key roles in the power electronics applications. In order for the power electronics designers to fully utilize the performance advantages of power devices, compact power device models are needed in the circuit simulator (Saber, P-spice, etc.). Therefore, it is very important to get accurate device models. However, there are many challenges due to the development of new power devices with new internal structure and new semiconductor materials (SiC, GaN, etc.).

In this dissertation, enhanced power diode model is presented with an improvement in the reverse blocking region. In the current power diode model in the Saber circuit simulator, an empirical approach was used to describe the low-bias reverse blocking region by introducing an effect called "conduction loss," a parameter that causes a linear relationship between the device voltage and current at low bias voltages with no physics meaning. Furthermore, this term is not sufficient to accurately describe the changes to the device characteristics as the junction temperature is varied. In the enhanced model, an analytical temperature dependent model for the reverse blocking characteristics has been developed for Schottky/JBS diodes by including the thermionic-emission mechanism in the low-bias range. The newly derived model equations have been implemented in Saber circuit simulator using MAST language. An automated parameter extraction software package developed for constructing silicon (Si) and silicon carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development.

This dissertation also presents a new Saber-compatible approach for modeling the inter-electrode capacitances of the Si CoolMOSTM transistor. This new approach accurately describes all three inter-electrode capacitances (i.e., gate-drain, gate-source, and drain-source capacitances) for the full operating range of the device. The model is derived using the actual charge distribution within the device rather than assuming a lumped charge or one-dimensional charge distribution. The comparison between the simulated data with the measured results validates the accuracy of the new physical model.