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dc.contributor.authorPerson, Clark Edwinen_US
dc.date.accessioned2014-03-14T20:33:47Z
dc.date.available2014-03-14T20:33:47Z
dc.date.issued2008-04-16en_US
dc.identifier.otheretd-04172008-110626en_US
dc.identifier.urihttp://hdl.handle.net/10919/31746
dc.description.abstractThe demand for high power density, high efficiency bus converters has increased interest in resonant topologies, particularly the LLC resonant converter. LLC resonant converters offer several advantages in efficiency, power density, and hold up time extension capability. Among high voltage (>500V) MOSFETs, Super Junction MOSFETs, such as Infineonâ s CoolMOS parts, offer lower Rds on than conventional parts and are a natural choice for this application to improve efficiency. However, there is a history of converter failure due to reverse recovery problems with the primary switchâ s body diode. Before selecting CoolMOS devices for use in a LLC resonant converter, it is necessary to investigate its performance in this application. Field failures of PWM soft switching phase shift full bridge converters have been attributed to large reverse recovery charge in the primary side MOSFET body diode. Under low load conditions the device cannot fully recover, and the large reverse recovery current can cause the device to enter secondary break down, leading to failure. The unique structure of Super Junction MOSFETs, such as CoolMOS, avoid this failure mode by providing a different path for the reverse current; however, the reverse recovery charge of CoolMOS devices is large and can cause a loss of efficiency. For this reason, it is important to avoid conditions under which the reverse recovery characteristics of the body diode can be seen.en_US
dc.publisherVirginia Techen_US
dc.relation.haspartcperson_thesis_final.pdfen_US
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectDC/DCen_US
dc.subjectLLC Resonant Converteren_US
dc.subjectSuperjuction MOSFETen_US
dc.titleSelection of Primary Side Devices for LLC Resonant Convertersen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.degreeMaster of Scienceen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
dc.contributor.committeememberWang, Fei Freden_US
dc.contributor.committeememberXu, Mingen_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-04172008-110626/en_US
dc.contributor.committeecochairLee, Fred C.en_US
dc.date.sdate2008-04-17en_US
dc.date.rdate2008-04-23
dc.date.adate2008-04-23en_US


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