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dc.contributor.authorLiu, Yinen_US
dc.date.accessioned2014-03-14T20:40:18Z
dc.date.available2014-03-14T20:40:18Z
dc.date.issued2001-06-15en_US
dc.identifier.otheretd-06212001-232846en_US
dc.identifier.urihttp://hdl.handle.net/10919/33671
dc.description.abstractThe Emitter Controlled Thyristor (ECT) is a new MOS-Gated Thyristor (MGT) that combines the ease of a MOS gate control with the superior current carrying capability of a thyristor structure for high-power applications. An ECT is composed of an emitter switch in series with the thyristor, an emitter-short switch in parallel with the emitter junction of the thyristor, a turn-on FET and the main thyristor structure. Numerical analysis shows that the ECT also offers superior high voltage current saturation capability even for high breakdown voltage ratings. Two different ECT structures are investigated in this research from numerical simulations to experimental fabrications. A novel ECT structure that utilizes IGBT compatible fabrication process was proposed. The emitter short FET, emitter switch FET and turn-on FET are all integrated with a high voltage thyristor. Numerical simulation results show that the ECT has a better conductivity modulation than that of the IGBT and at the same time exhibits superior high voltage current saturation capability, superior FBSOA and RBSOA. The technology trade-off between turn-off energy loss and forward voltage drop of the ECT is also better than that of the IGBT because of the stronger conductivity modulation. A novel self-aligned process is developed to fabricate the device. Experimental characteristics of the fabricated ECT devices show that the ECT achieves lower forward voltage drop and superior high voltage current saturation capability. A Hybrid ECT (HECT) structure was also developed in this research work. The HECT uses an external FET to realize the emitter switching function, hence a complicated fabrication issue was separated into two simple one. The cost of the fabrication decreases and the yield increases due to the hybrid integration. Numerical simulations demonstrate the superior on-state voltage drop and high voltage current saturation capability. A novel seven-mask process was developed to fabricate the HECT. Experimental results show that the HECT could achieve the lower forward voltage drop and superior current saturation capability. The resistive switching test was carried out to demonstrate the switching characteristics of the HECT.en_US
dc.publisherVirginia Techen_US
dc.relation.haspartthesis.pdfen_US
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Virginia Tech or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectEmitter Controlled Thyristoren_US
dc.subjectMOS-gated thyristoren_US
dc.subjectPower Semiconductor Devicesen_US
dc.titleDesign and fabrication of Emitter Controlled Thyristoren_US
dc.typeThesisen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.degreeMaster of Scienceen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
dc.contributor.committeechairHuang, Qin Alexen_US
dc.contributor.committeememberLai, Jih-Sheng Jasonen_US
dc.contributor.committeememberHa, Dong Samen_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-06212001-232846/en_US
dc.date.sdate2001-06-21en_US
dc.date.rdate2002-06-22
dc.date.adate2001-06-22en_US


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