Characterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and time-consuming. Due to the complexity of the device or the size of the application market, nonlinear modeling efforts may not be cost effective. Scattering parameters, widely used for small-signal passive and active device characterization, have received only cursory consideration for large-signal nonlinear device characterization due to technical and theoretical issues. We review the theory of S-parameters, active device characterization, and previous efforts to use S-parameters with large-signal nonlinear devices.

A robust, calibrated vector-measurement system is used to obtain device scattering parameters as a function of drive level. The unique measurement system architecture allows meaningful scattering parameter measurements of large-signal nonlinear devices, overcoming limitations reported by previous researchers.

A three-port S-parameter device model, with a nonlinear reflection coefficient terminating the third port, can be extracted from scattering parameters measured as a function of drive level. This three-port model provides excellent agreement with device measurements across a wide range of drive conditions. The model is used to simulate load-pull data for various drive levels which are compared to measured data.