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dc.contributor.authorKunselman, Gary L.en_US
dc.date.accessioned2009-03-12en_US
dc.date.accessioned2014-03-14T21:31:13Z
dc.date.available2014-03-14T21:31:13Z
dc.date.issued1992-12-15en_US
dc.identifier.otheretd-03122009-040933en_US
dc.identifier.urihttp://hdl.handle.net/10919/41493
dc.description.abstract

Portable communication systems require, in part, high-efficiency radio frequency power amplifiers (RF PA) if battery lifetime is to be conserved. Conventional amplifier classifications and definitions are presented in a unified and concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, a power output of 3 W, a battery supply voltage of 9 Vdc, and a sinusoidal-type signal to be amplified. Both classes are evaluated through recent research literature and simulated using the PSpice® computer simulation program. Class CE and class F are found to provide efficiencies exceeding 80 percent under the given system constraints.

en_US
dc.format.mediumBTDen_US
dc.publisherVirginia Techen_US
dc.relation.haspartLD5655.V855_1992.K867.pdfen_US
dc.subjectAmplifiersen_US
dc.subjectRadio frequencyen_US
dc.subject.lccLD5655.V855 1992.K867en_US
dc.titleRadio frequency power amplifiers for portable communication systemsen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical Engineeringen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
dc.contributor.committeechairMoore, Daniel J.en_US
dc.contributor.committeememberDavis, Willam A.en_US
dc.contributor.committeememberElshabini-Riad, Aicha A.en_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-03122009-040933/en_US
dc.date.sdate2009-03-12en_US
dc.date.rdate2009-03-12


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