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dc.contributor.authorDitz, Marc William Legorien_US
dc.date.accessioned2014-03-14T21:32:05Z
dc.date.available2014-03-14T21:32:05Z
dc.date.issued1992-12-05en_US
dc.identifier.otheretd-03172010-020656en_US
dc.identifier.urihttp://hdl.handle.net/10919/41722
dc.description.abstractsee documenten_US
dc.format.mediumBTDen_US
dc.publisherVirginia Techen_US
dc.relation.haspartLD5655.V855_1992.D589.pdfen_US
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectJunction transistorsen_US
dc.subject.lccLD5655.V855 1992.D589en_US
dc.titleS-parameter modeling of two-port devices using a single, memoryless nonlinearityen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.description.degreeMaster of Scienceen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical Engineeringen_US
dc.contributor.committeechairKeller, Donald M.en_US
dc.contributor.committeememberDavis, William A.en_US
dc.contributor.committeememberRiad, Sedki Mohameden_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-03172010-020656/en_US
dc.date.sdate2010-03-17en_US
dc.date.rdate2010-03-17
dc.date.adate2010-03-17en_US


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