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    • Superjunction Power Transistors With Interface Charges: A Case Study for GaN 

      Ma, Yunwei; Xiao, Ming; Zhang, Ruizhe; Wang, Han; Zhang, Yuhao (2019-12-13)
      Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. ...