Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

Abstract

We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99K at 20 degrees C). (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676085]

Description
Keywords
Quantum wells, Current density, Electrical properties, Aluminum, Electrons
Citation
Zhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; et al., "Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers," Appl. Phys. Lett. 100, 021107 (2012); http://dx.doi.org/10.1063/1.3676085