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dc.contributorVirginia Techen_US
dc.contributor.authorPeng, C. H.en_US
dc.contributor.authorDesu, Seshu B.en_US
dc.date.accessioned2014-04-16T14:16:44Z
dc.date.available2014-04-16T14:16:44Z
dc.date.issued1992-07-01
dc.identifier.citationPeng, CH; Desu, SB, "Low-temperature metalorganic chemical vapor-deposition of perovskite PB(ZRXTI1-X)O3 thin-films," Appl. Phys. Lett. 61, 16 (1992); http://dx.doi.org/10.1063/1.107646
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/47391
dc.description.abstractPb (ZrxTi1-x)O3 thin films with perovskite structure were successfully prepared on sapphire disks, Pt/Ti/SiO2/Si, and RuOx/SiO2/Si substrates at temperatures as low as 550-degrees-C by hot-wall metalorganic chemical vapor deposition. Safe and stable precursors were used, namely: lead tetramethylheptadione [Pb(thd)2], zirconium tetramethylheptadione [Zr(thd)4], and titanium ethoxide. The deposition rates were in the range of 10.0 to 20.0 nm/min. The Auger electron spectroscopy (AES) depth profile showed good uniformity across the bulk of the films. The AES spectra also showed no carbon contamination in the bulk of the films. Zr/Ti ratio were easily controlled by the precursor temperatures and the flow rate of diluent gas. Optical constants were measured by a UV-VIS-NIR spectrophotometer. As-deposited films were dense and showed uniform and fine grain size. The 600-degrees-C annealed film (Pb/Zr/Ti=50/41/9) showed a spontaneous polarization of 23.3-mu-C/cm3 and a coercive field of 64.5 kV/cm.
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectAuger electron spectroscopyen_US
dc.subjectMetallic thin filmsen_US
dc.subjectThin film structureen_US
dc.subjectDielectric oxidesen_US
dc.subjectLeaden_US
dc.titleLow-temperature metalorganic chemical vapor-deposition of perovskite PB(ZRXTI1-X)O3 thin-filmsen_US
dc.typeArticle - Refereeden_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/61/1/10.1063/1.107646
dc.date.accessed2014-03-27
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.107646
dc.type.dcmitypeTexten_US


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