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dc.contributorVirginia Techen_US
dc.contributor.authorAsryan, Levon V.en_US
dc.date.accessioned2014-04-16T14:16:44Z
dc.date.available2014-04-16T14:16:44Z
dc.date.issued2006-02-01
dc.identifier.citationAsryan, LV, "Maximum power of quantum dot laser versus internal loss," Appl. Phys. Lett. 88, 073107 (2006); http://dx.doi.org/10.1063/1.2174103
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/47392
dc.description.abstractInternal loss, which increases with the carrier density outside the active region, causes a rollover of the light-current curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The maximum power is calculated as a steeply decreasing function of internal loss cross section. The use of multiple layers of quantum dots is shown to significantly improve the laser output characteristics.
dc.description.sponsorshipU.S. Army Research Office under Grant No. W911-NF-05-1-0308
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectConfined active-regionen_US
dc.subjectSemiconductor-lasersen_US
dc.subjectWell lasersen_US
dc.subjectOptical lossen_US
dc.subjectThresholden_US
dc.subjectGainen_US
dc.titleMaximum power of quantum dot laser versus internal lossen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/88/7/10.1063/1.2174103
dc.date.accessed2014-03-27
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.2174103
dc.type.dcmitypeTexten_US


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