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dc.contributorVirginia Techen_US
dc.contributor.authorJoshi, Pooran C.en_US
dc.contributor.authorRyu, S. O.en_US
dc.contributor.authorZhang, X.en_US
dc.contributor.authorDesu, Seshu B.en_US
dc.date.accessioned2014-04-16T14:16:46Z
dc.date.available2014-04-16T14:16:46Z
dc.date.issued1997-03-01
dc.identifier.citationJoshi, PC; Ryu, SO; Zhang, X; et al., "Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique," Appl. Phys. Lett. 70, 1080 (1997); http://dx.doi.org/10.1063/1.118485
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10919/47403
dc.description.abstractPolycrystalline SrBi2Ti2O9 thin films having a layered-perovskite structure were fabricated by a modified metalorganic solution deposition technique using room temperature processed alkoxide-carboxylate precursor solution. It was possible to obtain a complete perovskite phase at an annealing temperature of 650 degrees C and no pyrochlore phase was observed even up to 600 degrees C. In addition, the SrBi2Ta2O9 thin films annealed at 750 degrees C exhibited better structural, dielectric, and ferroelectric properties than those reported by previous techniques. The effects of postdeposition annealing on the structural, dielectric, and ferroelectric properties were analyzed. The electrical measurements were conducted on Pt/SrBi2Ta2O9/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 330 and 0.023 and the remanent polarization and the coercive field were 8.6 mu C/cm(2) and 23 kV/cm, respectively, for 0.25-mu m-thick films annealed at 750 degrees C. The leakage current density was lower than 10(-8) A/cm(2) at an applied electric Weld of 150 kV/cm. The films showed good switching endurance under bipolar stressing at least up to 10(10) switching cycles. (C) 1997 American Institute of Physics.
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAIP Publishing
dc.subjectMemoriesen_US
dc.titleProperties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition techniqueen_US
dc.typeArticle - Refereeden_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/70/9/10.1063/1.118485
dc.date.accessed2014-03-27
dc.title.serialApplied Physics Letters
dc.identifier.doihttps://doi.org/10.1063/1.118485
dc.type.dcmitypeTexten_US


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