Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films
Desu, Seshu B.
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Ferroelectric SrBi2TaxNb2-xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHCIFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process. (C) 1996 American Institute of Physics.