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dc.contributorVirginia Tech
dc.contributor.authorSauncy, T.
dc.contributor.authorHoltz, M.
dc.contributor.authorZallen, R.
dc.date.accessioned2014-05-07T15:36:55Z
dc.date.available2014-05-07T15:36:55Z
dc.date.issued1994-10
dc.identifier.citationSauncy, T.; Holtz, M.; Zallen, R., "Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs," Phys. Rev. B 50, 10702 DOI: http://dx.doi.org/10.1103/PhysRevB.50.10702
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/10919/47831
dc.description.abstractWe have used hydrostatic pressure as a means for studying a resonant Raman mode observed at 47 cm(-1) in highly disordered, ion implanted, unannealed GaAs. The mode shifts weakly (-0.07 +/- 0.15 cm(-1)/GPa), supporting an identification of this band-resonant vibration as stemming from the breathing mode of the gallium vacancies, which are expected to be in high concentration. We measure a pressure coefficient of the longitudinal-optic phonon in these (5.5 nm) nanocrystals of GaAs to be 3.6 +/- 0.1 cm(-1)/GPa. The good agreement between our value and the pressure shift of this phonon in bulk GaAs implies that the bulk modulus is independent of size at least down to this size crystallite.
dc.language.isoen_US
dc.publisherAmerican Physical Society
dc.subjectactive acoustic phonons
dc.subjectmolecular-beam epitaxy
dc.subjecthydrostatic-pressure
dc.subjectraman-scattering
dc.subjectalas
dc.subjectinp
dc.subjectphysics, condensed matter
dc.titleEffect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs
dc.typeArticle
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.10702
dc.date.accessed2014-04-23
dc.title.serialPhysical Review B
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.50.10702


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