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dc.contributor.authorJain, Adityaen
dc.date.accessioned2014-09-19T08:01:06Zen
dc.date.available2014-09-19T08:01:06Zen
dc.date.issued2014-09-18en
dc.identifier.othervt_gsexam:3693en
dc.identifier.urihttp://hdl.handle.net/10919/50527en
dc.description.abstractRealization of low-resistance electrical contacts on both sides of a solar cell is essential for obtaining the best possible performance. A key component of a solar cell is a metal contact on the illuminated side of the cell which should efficiently collect carriers. These contacts can be formed using an opaque metal grid/finger pattern. The metal electrode may be used alone or in combination with a broad-area transparent conductive film. This work aims at investigating the impact of the electrical contacting scheme employed in InGaN/GaN Schottky barrier solar cells on their performance. InGaN is a III-V compound semiconductor and has a tunable direct band-gap (0.7 eV to 3.4 eV) which spans most of the solar spectrum; this fact, along with other beneficial material properties, motivates the study of InGaN photovoltaic devices. A number of groups have recently investigated InGaN-based homo-junction and hetero-junction p-i-n solar cells. However, very few groups have worked on InGaN Schottky solar cells. Compared to p-n junctions, Schottky barrier solar cells are cheaper to grow and fabricate; they are also expected to improve the spectral response because of near surface depletion regions in the shorter wavelength regions. In this particular work on InGaN based solar cells, a Schottky diode structure was used to avoid the issue of highly resistive p-type InGaN. In this study, platinum (Pt) is used to form a Schottky barrier with an InGaN/GaN absorber region. Electrical and optical properties of platinum films are investigated as a function of their thickness. InGaN/GaN Schottky solar cells with platinum as the transparent conductive film are reported and their performance is evaluated as a function of the metal thickness.en
dc.format.mediumETDen
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectTransparent conductive layeren
dc.subjectSchottky solar cellen
dc.subjectDevice characterizationen
dc.titleImpact of Electrical Contacting Scheme on Performance of InGaN/GaN Schottky Solar Cellsen
dc.typeThesisen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.description.degreeMaster of Scienceen
thesis.degree.nameMaster of Scienceen
thesis.degree.levelmastersen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.disciplineElectrical Engineeringen
dc.contributor.committeechairGuido, Louis J.en
dc.contributor.committeememberPlassmann, Paul E.en
dc.contributor.committeememberLu, Guo Quanen


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