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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL)en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorZhu, Yanen
dc.date.accessioned2015-05-04T16:58:30Zen
dc.date.available2015-05-04T16:58:30Zen
dc.date.issued2013-03-21en
dc.identifier.citationHudait, Mantu K., Zhu, Yan (2013). Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Journal of Applied Physics, 113(11). doi: 10.1063/1.4795284en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51971en
dc.description.abstractCrystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111) A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO2) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, DEv values of HfO2 relative to (100) Ge, (110) Ge, and (111) Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, Delta E-V(100)Ge > Delta E-V(111)Ge > Delta E-V(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, DEc relation, Delta E-c(110)Ge > Delta E-c(111)Ge > Delta E-c(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO2 on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p-and n- channel metal-oxide field-effect transistor for low-power application. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795284]en
dc.format.extent7 pagesen
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectEpitaxyen
dc.subjectBand gapen
dc.subjectIII-V semiconductorsen
dc.titleEnergy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layersen
dc.typeArticle - Refereeden
dc.contributor.departmentElectrical and Computer Engineeringen
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4795284en
dc.date.accessed2015-04-24en
dc.title.serialJournal of Applied Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4795284en
dc.type.dcmitypeTexten


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