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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineeringen_US
dc.contributorPenn State. Electrical Engineeringen_US
dc.contributorIQE Inc.en_US
dc.contributor.authorZhu, Yizhengen_US
dc.contributor.authorJain, Nikhilen_US
dc.contributor.authorMohata, Dheeraj K.en_US
dc.contributor.authorDatta, Sumanen_US
dc.contributor.authorLubyshev, Dmitrien_US
dc.contributor.authorFastenau, Joel M.en_US
dc.contributor.authorLiu, Amy K.en_US
dc.contributor.authorHudait, Mantu K.en_US
dc.date.accessioned2015-05-04T16:58:31Z
dc.date.available2015-05-04T16:58:31Z
dc.date.issued2013-01-14
dc.identifier.citationZhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K. (2013). Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application. Journal of Applied Physics, 113(2). doi: 10.1063/1.4775606
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10919/51976
dc.description.abstractThe experimental study of the valence band offset (Delta E-v) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a Delta E-v of 0.39 +/- 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be similar to 0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775606]
dc.description.sponsorshipNational Science Foundation - Grant No. ECCS-1028494
dc.description.sponsorshipIntel Corporation
dc.format.extent6 pages
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics
dc.subjectIII-V semiconductorsen_US
dc.subjectValence bandsen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectHeterojunctionsen_US
dc.subjectSemiconductor insulator semiconductor structuresen_US
dc.titleBand offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor applicationen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4775606
dc.date.accessed2015-04-24
dc.title.serialJournal of Applied Physics
dc.identifier.doihttps://doi.org/10.1063/1.4775606
dc.type.dcmitypeTexten_US


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