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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineeringen_US
dc.contributorVirginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS)en_US
dc.contributor.authorHudait, Mantu K.en_US
dc.contributor.authorZhu, Yizhengen_US
dc.contributor.authorJain, Nikhilen_US
dc.contributor.authorMaurya, Deepamen_US
dc.contributor.authorZhou, Y.en_US
dc.contributor.authorPriya, Shashanken_US
dc.date.accessioned2015-05-04T16:58:31Z
dc.date.available2015-05-04T16:58:31Z
dc.date.issued2013-07-14
dc.identifier.citationHudait, M. K.Zhu, Y.Jain, N.Maurya, D.Zhou, Y.Priya, S.(2013). Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge. Journal of Applied Physics, 114(2). doi: 10.1063/1.4813226
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10919/51977
dc.description.abstractGrowth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO3 on (110) Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO3 layer as well as shows a sharp heterointerface between BaTiO3 and Ge with no traceable interfacial layer. The valence band offset, Delta E-v, of 1.99 +/- 0.05 eV at the BaTiO3/(110) Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, Delta E-c, of 1.14 +/- 0.1 eV is calculated using the bandgap energies of BaTiO3 of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO3/(110) Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application. (C) 2013 AIP Publishing LLC.
dc.format.extent7 pages
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics
dc.subjectGermaniumen_US
dc.subjectElemental semiconductorsen_US
dc.subjectEpitaxyen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectMOSFETsen_US
dc.titleQuasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Geen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/114/2/10.1063/1.4813226
dc.date.accessed2015-04-24
dc.title.serialJournal of Applied Physics
dc.identifier.doihttps://doi.org/10.1063/1.4813226
dc.type.dcmitypeTexten_US


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