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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen_US
dc.contributorKorea Institute of Materials Science (KIMS). Functional Ceramics Departmenten_US
dc.contributorPusan-Susan-Taehak. Division of Materials Science and Engineeringen_US
dc.contributor.authorRyu, Junghoen_US
dc.contributor.authorPriya, Shashanken_US
dc.contributor.authorPark, Chee-Sungen_US
dc.contributor.authorKim, Kun-Youngen_US
dc.contributor.authorChoi, Jong-Jinen_US
dc.contributor.authorHahn, Byung-Dongen_US
dc.contributor.authorYoon, Woon-Haen_US
dc.contributor.authorLee, Byoung-Kuken_US
dc.contributor.authorPark, Dong-Sooen_US
dc.contributor.authorPark, Chanen_US
dc.date.accessioned2015-05-21T19:47:30Z
dc.date.available2015-05-21T19:47:30Z
dc.date.issued2009-07-15
dc.identifier.citationRyu, Jungho, Priya, Shashank, Park, Chee-Sung, Kim, Kun-Young, Choi, Jong-Jin, Hahn, Byung-Dong, Yoon, Woon-Ha, Lee, Byoung-Kuk, Park, Dong-Soo, Park, Chan (2009). Enhanced domain contribution to ferroelectric properties in freestanding thick films. Journal of Applied Physics, 106(2). doi: 10.1063/1.3181058en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10919/52475
dc.description.abstractWe report the success in fabricating clamped, "island," and freestanding 10 mu m thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/SiO(2)/Si) substrate and crystallization was conducted by annealing at 700 degrees C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3181058]en_US
dc.description.sponsorshipKorea (South). Ministry of Knowledge Economy. Component-Material Development Programen_US
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciencesen_US
dc.format.extent5 pagesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectThin filmsen_US
dc.subjectDielectric thin filmsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectThin film structureen_US
dc.subjectDomain wallsen_US
dc.titleEnhanced domain contribution to ferroelectric properties in freestanding thick filmsen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/106/2/10.1063/1.3181058en_US
dc.date.accessed2015-04-24en_US
dc.title.serialJournal of Applied Physicsen_US
dc.identifier.doihttps://doi.org/10.1063/1.3181058
dc.type.dcmitypeTexten_US


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