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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen_US
dc.contributorUniversity of Illinois at Urbana-Champaign. Department of Electrical and Computer Engineering. Micro & Nanotechnology Laben_US
dc.contributorRaytheon RF Componentsen_US
dc.contributor.authorShi, Frank F.en_US
dc.contributor.authorChang, Kuo-lihen_US
dc.contributor.authorHsieh, Kuang-Chienen_US
dc.contributor.authorGuido, Louis J.en_US
dc.contributor.authorHoke, Billen_US
dc.date.accessioned2015-05-21T19:47:33Z
dc.date.available2015-05-21T19:47:33Z
dc.date.issued2004-02-01
dc.identifier.citationShi, F. F., Chang, K., Hsieh, K. C., Guido, L., Hoke, B. (2004). Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors. Journal of Applied Physics, 95(3), 909-912. doi: 10.1063/1.1633980en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10919/52503
dc.description.abstractMaterial integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy gamma(o) measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy E-o with the measured interface fracture energy gamma(o), the bondability of a few major III-V semiconductors was analyzed. (C) 2004 American Institute of Physics.en_US
dc.description.sponsorshipUnited States. Department of Energy - Grant No. DEFG02-91-ER45439en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency - Grant No. MDA 972-00-1-0020en_US
dc.format.extent5 pagesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectInterface structureen_US
dc.subjectAdhesionen_US
dc.subjectChemical bondsen_US
dc.subjectEnergy dispersive X-ray spectroscopyen_US
dc.titleInterface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductorsen_US
dc.typeArticle - Refereeden_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1633980en_US
dc.date.accessed2015-04-24en_US
dc.title.serialJournal of Applied Physicsen_US
dc.identifier.doihttps://doi.org/10.1063/1.1633980
dc.type.dcmitypeTexten_US


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