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dc.contributor.authorGraham, William Alexanderen
dc.date.accessioned2015-06-23T19:08:03Zen
dc.date.available2015-06-23T19:08:03Zen
dc.date.issued1960en
dc.identifier.urihttp://hdl.handle.net/10919/53025en
dc.description.abstractIn this work the infrared absorption of neutron irradiated silicon was compared to that of non-irradiated silicon at room and liquid nitrogen temperatures. It was found that instead of the 1.75 micron absorption band that has been mentioned in numerous papers transmission was completely cut off below about 2.5 microns at room temperature and about 1.8 microns at liquid nitrogen temperature. A weak absorption band was noted at 4.4 microns for all three samples at liquid nitrogen temperature and the two irradiated samples at room temperature. Absorption due to free carriers depressed at the longer wavelengths (10-15 microns) with irradiation and cooling as was expected from past experiments. The resistivity of Si₄ increased from an assumed initial value of 10³ ohm-om to 1.89 x 10⁵ ohm-om.en
dc.format.extent102, [2] leavesen
dc.format.mimetypeapplication/pdfen
dc.language.isoen_USen
dc.publisherVirginia Polytechnic Instituteen
dc.relation.isformatofOCLC# 26846963en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1960.G734en
dc.subject.lcshGround-cushion phenomenonen
dc.subject.lcshGround-effect machinesen
dc.titleA theoretical and experimental investigation of the annular jet ground effect machineen
dc.typeThesisen
dc.contributor.departmentAeronautical Engineeringen
dc.description.degreeMaster of Scienceen
thesis.degree.nameMaster of Scienceen
thesis.degree.levelmastersen
thesis.degree.grantorVirginia Polytechnic Instituteen
thesis.degree.disciplineAeronautical Engineeringen
dc.type.dcmitypeTexten


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