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Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
(Nature Publishing Group, 2015-02-16)
We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x 5 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), ...