Now showing items 1-2 of 2
Growth, strain relaxation properties and high-kappa dielectric integration of mixed-anion GaAs1-ySby metamorphic materials
(American Institute of Physics, 2014-10-17)
Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different ...
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
(American Institute of Physics, 2014-01-23)
In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. ...