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Growth, strain relaxation properties and high-kappa dielectric integration of mixed-anion GaAs1-ySby metamorphic materials
(American Institute of Physics, 2014-10-17)
Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different ...