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Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs
(American Physical Society, 1994-10)
We have used hydrostatic pressure as a means for studying a resonant Raman mode observed at 47 cm(-1) in highly disordered, ion implanted, unannealed GaAs. The mode shifts weakly (-0.07 +/- 0.15 cm(-1)/GPa), supporting an ...